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VBHA1230N
N-Channel 20 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) Max. 0.300 at VGS = 4.5 V 0.350 at VGS = 2.5 V
ID (A) 0.9 0.7
Qg (Typ.) 3.5
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Load Switching for Portable Devices • DC/DC Converter
SOT-7 23 D
G1
3D
G
S2
Top View S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
20
V
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (t = 300 µs)b
TA = 25 °C TA = 70 °C
ID
IDM
0.9
0.72
0.68
0.57
A
3.5
Continuous Source Current (Diode Conduction)a
IS
0.
VBHA1230N Datasheet
