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VBED1606 - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • Package with Low Thermal Resistance.
  • 100 % Rg and UIS Tested 5 1 234 1, 2, 3 Source 4 Gate 5 Drain 5 D 4 G SSS 12 3.

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Datasheet Details

Part number VBED1606
Manufacturer VBsemi
File Size 286.99 KB
Description N-Channel MOSFET
Datasheet download datasheet VBED1606 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VBED1606 www.VBsemi.com N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0050 0.0055 97 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested 5 1 234 1, 2, 3 Source 4 Gate 5 Drain 5 D 4 G SSS 12 3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.
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