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VBED1303 - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2011/65/EU.

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Datasheet Details

Part number VBED1303
Manufacturer VBsemi
File Size 283.36 KB
Description N-Channel MOSFET
Datasheet download datasheet VBED1303 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VBED1303 N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0023 at VGS = 10 V 0.0032 at VGS = 4.5 V 5 1 234 ID (A)a, e 90 80 Qg (Typ) 51 nC 5 D 4 G 1, 2, 3 Source 4 Gate 5 Drain SSS 12 3 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.
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