Datasheet4U Logo Datasheet4U.com

VBED1603 - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2011/65/EU.

📥 Download Datasheet

Datasheet Details

Part number VBED1603
Manufacturer VBsemi
File Size 285.45 KB
Description N-Channel MOSFET
Datasheet download datasheet VBED1603 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VBE100-12NO7 High Performance Fast Recovery Diode IXYS
VBE17-06NO7 Single Phase Rectifier Bridge IXYS
VBE17-12NO7 Single Phase Rectifier Bridge IXYS
VBE20 Single Phase Rectifier Bridge IXYS
VBE26-06NO7 High Performance Fast Recovery Diode IXYS

Other Datasheets by VBsemi

Part Number Description
VBED1606 N-Channel MOSFET
VBED1101N N-Channel MOSFET
VBED1303 N-Channel MOSFET
VBED1402 N-Channel MOSFET
VBED1806 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VBED1603 N-Channel 6 0V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0023 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A)a, e 100 90 Qg (Typ) 61nC 5 1 234 1, 2, 3 Source 4 Gate 5 Drain 5 D 4 G SSS 12 3 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.
Published: |