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VBA3316G - Dual N-Channel MOSFET

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Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number VBA3316G
Manufacturer VBsemi
File Size 309.05 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet VBA3316G Datasheet
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VBA3316G www.VBsemi.com Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) (Ω) 0.017 at VGS = 10 V 0.021 at V GS = 4.5 V 0.009 at VGS = 10 V 0.010 at V GS = 4.5 V ID (A)a 8.0 7.5 15.0 14.0 Qg (Typ.) 12.5 17 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.43 V at 1.0 A IF (A)a 3.
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