VBA3316SA - Dual N-Channel Field Effect Transistor

Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET.
100 % UIS Tested.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC.

VBsemi

Datasheet Details

Part number	VBA3316SA
Manufacturer	VBsemi
File Size	287.70 KB
Description	Dual N-Channel Field Effect Transistor
Datasheet	VBA3316SA Datasheet
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Full PDF Text Transcription

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VBA3316SA www.VBsemi.com Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.008 at VGS = 10 V 30 0.012 at VGS = 4.5 V ID (A) 8 6.8 Qg (Typ.

Published: Dec 22, 2024 |