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BUK655-500B - N-Channel 600-V Power MOSFET

Key Features

  • Low gate charge Qg results in simple drive requirement Available.
  • Improved gate, avalanche and dynamic dV/dt ruggedness.
  • Fully characterized capacitance and avalanche voltage and current TO-220AB S D G D G S N-Channel MOSFET.

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Datasheet Details

Part number BUK655-500B
Manufacturer VBsemi
File Size 289.27 KB
Description N-Channel 600-V Power MOSFET
Datasheet download datasheet BUK655-500B Datasheet

Full PDF Text Transcription for BUK655-500B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK655-500B. For precise diagrams, and layout, please refer to the original PDF.

BUK655-500B-VB BUK655-500B-VB Datasheet /$IBOOFM07 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 6...

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ARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Single 0.

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