Full PDF Text Transcription for BUK445-100A (Reference)
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BUK445-100A-VB BUK445-100A-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.127at VGS = 10 V ID (A) 18 TO-220AB D F...
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V(BR)DSS (V) RDS(on) (Ω) 100 0.127at VGS = 10 V ID (A) 18 TO-220AB D FEATURES • Trench Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters RoHS COMPLIANT GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyb L = 0.
BUK445-100A Datasheet
