Full PDF Text Transcription for BUK7Y8R7-60E (Reference)
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BUK7Y8R7-60E-VB www.VBsemi.com BUK7Y8R7-60E-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V I...
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SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0050 0.0055 97 Single 5 1 234 1, 2, 3 Source 4 Gate 5 Drain FEATURES • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested 5 D 4 G SSS 12 3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.
BUK7Y8R7-60E Datasheet
