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8N100-C - 1000V N-CHANNEL POWER MOSFET

Description

The UTC 8N100-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S0.
  • RDS(ON) ≤ 1.45 Ω @ VGS=10V, ID=4.0A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Other Datasheets by Unisonic Technologies

Part Number Description
8N100-FC N-CHANNEL MOSFET

Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 8N100-C 8.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N100-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 1.45 Ω @ VGS=10V, ID=4.
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