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8N10LF3 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Features

  • Order code STL8N10LF3 VDS 100 V RDS(on) max. 35 mΩ ID 7.8 A.
  • AEC-Q101 qualified.
  • Logic level VGS(th).
  • 175 °C maximum junction temperature.
  • 100% avalanche rated.
  • Wettable flank package.

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Other Datasheets by STMicroelectronics

Part Number Description

Full PDF Text Transcription

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STL8N10LF3 Automotive-grade N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL8N10LF3 VDS 100 V RDS(on) max. 35 mΩ ID 7.8 A  AEC-Q101 qualified  Logic level VGS(th)  175 °C maximum junction temperature  100% avalanche rated  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
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