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8N18 - N-Channel MOSFET Transistor

Description

Drain Current ID= 8A@ TC=25℃ Drain Source Voltage- : VDSS= 180V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Dra

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 8N18 ·DESCRIPTION ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 180V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 180 ±20 8 V V A ID(puls) Pulse Drain Current 20 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.67 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
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