Click to expand full text
PK636BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 8mΩ @VGS = 10V
ID 46A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
46 29 120
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
12 9.7
Avalanche Current
IAS 20
Avalanche Energy
L =0.1mH
EAS
20
Power Dissipation
TC = 25 °C TC = 100 °C
PD
30 12
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.1 1.
PK636BA Datasheet
