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PK630HY
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 4.9mΩ @VGS = 10V
30V 7.8mΩ @VGS = 10V
ID CH. 64A Q2 40A Q1
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH.
LIMITS
Drain-Source Voltage
Q2 VDS
Q1
30 30
Gate-Source Voltage
Q2 VGS
Q1
±20 ±20
Continuous Drain Current3
TC = 25 °C TC = 100 °C
Q2 Q1 ID Q2 Q1
64 40 40 25
Pulsed Drain Current1
Q2 IDM Q1
150 90
Continuous Drain Current
TA = 25 °C TA = 70 °C
Q2 Q1 ID Q2 Q1
21 14 17 11
Avalanche Current
Q2 IAS
Q1
35 21
Avalanche Energy
L = 0.1mH
Q2 EAS
Q1
61 22
Power Dissipation
TC = 25 °C TC = 100 °C
Q2 Q1 PD Q2 Q1
37 24 15 9.6
REV 1.
PK630HY Datasheet
