P2803NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 27.5mΩ @VGS = 10V
-30V
34mΩ @VGS = -10V
ID Channel 7A N -6A P
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TC = 25 °C TC = 70 °C
N7 P -6 ID N 6 P -5
Pulsed Drain Current1
N 20 IDM P -20
Power Dissipation
TC = 25 °C TC = 70 °C
N2 P2 PD N 1.3 P 1.3
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
W °C
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle ≦ 1%
SYMBOL Rq JA
TYPICAL
MAXIMUM UNITS 62.5 °C / W
Rev 1.1
1 2015/5/22
N&P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER...
