P2803BMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 28mΩ @VGS = 10V
ID 6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
VGS ID IDM
±20 6 4 30
Avalanche Current Avalanche Energy
Power Dissipation
L = 0.1m H TA = 25 °C TA = 70 °C
IAS EAS
21 22 1 0.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient(Steady-State) 1Pulse width limited by maximum junction temperature.
SYMBOL Rq JA
TYPICAL
MAXIMUM UNITS 125 °C / W
Ver 1.0
1 2012/4/12
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST...
