P2803HVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 27.5mΩ @VGS = 10V
ID 6.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1,2
TA = 25 °C TA = 70 °C
ID IDM
6.5 5 30
Avalanche Current
IAS 20
Avalanche Energy
L = 0.1m H
Power Dissipation
TA = 25 °C TA = 70 °C
2 1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
Rq JA
63 °C /...
