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P0908ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
80V
9mΩ @VGS = 10V
43A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current2 Pulsed Drain Current1,2
TC = 25 °C
ID
43
TC = 100 °C
27
IDM
160
Avalanche Current
IAS
38
Avalanche Energy
L = 0.1mH
EAS
72
Power Dissipation
TC = 25 °C
PD
37
TC = 100 °C
15
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3.3 62.
P0908ATF Datasheet
