Click to expand full text
P0465CT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.6mΩ @VGS = 10V
ID 4A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current2
TC= 25 °C TC= 100 °C
ID
IDM IAS
4 2.5 15 2
Avalanche Energy2
EAS 20
Power Dissipation
TC= 25 °C TC= 100°C
PD
71 28
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2 VDD=50V ,L=10mH,Starting Tj =25 °C.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 1.75 °C / W
REV 1.
P0465CT Datasheet
