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P0465CIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.6Ω @VGS = 10V
ID 4A
TO-251(IS)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1，2 Avalanche Current3
TC= 25 °C TC= 100 °C
ID
IDM IAS
4 2.5 15 2
Avalanche Energy3
EAS 20
Power Dissipation
TC= 25 °C TC= 100°C
PD
54 21
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25˚C.
P0465CIS Datasheet
