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P0465AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
2.5Ω @VGS = 10V
ID 4A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2 Pulsed Drain Current1，2
TC = 25 °C TC = 100 °C
ID IDM
4 2.5 7
Avalanche Energy3
EAS 20
Power Dissipation
TC = 25 °C TC = 100 °C
PD
26 10
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH ,starting TJ = 25˚ C.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 4.
P0465AD Datasheet
