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NDT456P - -30V P-ChanneI MOSFET

General Description

Power SOT-223 P-Channel enhancement mode power field effect transistors especially tailored to minimize on state resistance and provide superior switching performance.

Key Features

  • High power and current handling capability in a widely used surface mount package. 2.1Features VDS (V)=-30V ID=-7.5A RDS(ON).

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Datasheet Details

Part number NDT456P
Manufacturer UMW
File Size 227.72 KB
Description -30V P-ChanneI MOSFET
Datasheet download datasheet NDT456P Datasheet

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UMW NDT456P -30V P-ChanneI MOSFET 1.Description Power SOT-223 P-Channel enhancement mode power field effect transistors especially tailored to minimize on state resistance and provide superior switching performance. 2.2Features High power and current handling capability in a widely used surface mount package. 2.1Features VDS (V)=-30V ID=-7.5A RDS(ON)<25mΩ(VGS=-10V) RDS(ON)<30mΩ(VGS=-4.5V) High density cell design for extremely low RDS(ON) 3.Pinning information Pin Symbol Description 1 G GATE 2 D DRAIN 3 S SOURCE SOT-223 top view G D S 4.