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NDT452AP - -30V P-ChanneI MOSFET

General Description

Power SOT-223 P-Channel enhancement mode power field effect transistors especially tailored to minimize on state resistance and provide superior switching performance.

2.

Key Features

  • VDS (V)=-30V ID=-5A RDS(ON).

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Datasheet Details

Part number NDT452AP
Manufacturer UMW
File Size 220.96 KB
Description -30V P-ChanneI MOSFET
Datasheet download datasheet NDT452AP Datasheet

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UMW NDT452AP -30V P-ChanneI MOSFET 1.Description Power SOT-223 P-Channel enhancement mode power field effect transistors especially tailored to minimize on state resistance and provide superior switching performance. 2.Features VDS (V)=-30V ID=-5A RDS(ON)<65mΩ(VGS=-10V) RDS(ON)<100mΩ(VGS=-4.5V) High power and current handling capability in a widely used surface mount package. High density cell design for extremely low RDS(ON) 3.Pinning information Pin Symbol Description 1 G GATE 2,4 D DRAIN 3 S SOURCE SOT-223 top view 4.