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PHI920-33 - Wireless Bipolar Power Transistor/ 33W 1930 - 1990 MHz

Features

  • NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System PHI 920-33 v2.01 Absolute’fiaximum Parameter Collector-EmitterVoltage Collector-Emitter Emitter-Base Voltage Ratings at 25°C 1 Symbol V CEO V ES V ES0 L PO T s-r0 TJ eJC 1 Rating 25 65 3.0 4.7 91 -55 to +150 200 1.6 Units V V ,181 (4.60)+.010 (0.25) 225 (5.72)a.015 (0.38) BASE 220 I-(5.59) , II Voltage V A w “C “C “CIW.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PHI920-45 Wireless Bipolar Power Transistor/ 45W 1930 - 1990 MHz
PHI214-0851 Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
PHI214-20EL Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25L Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25S Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz

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an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System PHI 920-33 v2.01 Absolute’fiaximum Parameter Collector-EmitterVoltage Collector-Emitter Emitter-Base Voltage Ratings at 25°C 1 Symbol V CEO V ES V ES0 L PO T s-r0 TJ eJC 1 Rating 25 65 3.0 4.7 91 -55 to +150 200 1.6 Units V V ,181 (4.60)+.010 (0.25) 225 (5.72)a.015 (0.38) BASE 220 I-(5.59) , II Voltage V A w “C “C “CIW .4~~r?:-ll(o.03~ CollectorCurrent Power Dissipation StorageTemperature JunctionTemperature Thermal Resistance I .087 (2.21)*.010 (0.25) I I 1 II t UNLESS OTHERWISE NOTED, TOLERANCES ARE INCHES r.
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