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PHI214-0851 - Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz

Features

  • NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic~MetalKeramic Package Absolute Maximum Ratings at 25°C Parameter Symbol Rating 27 20 3.5 Units t------T')JFH!T-T. J V V V mA W I “C “C ‘3 I .3?>= 310 C9.>3Z. >3) I I Collector-Emitter Voltage Collector-Emitter Voltage Emitter-BaseVoltage Collector Current (Peak) Total Power Dissip.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PHI214-20EL Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25L Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25S Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-30EL Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
PHI214-6M Radar Pulsed Power Transistor/ SW/ looms Pulse/ 10% Duty 1.2 - 1.4 GHz

Full PDF Text Transcription

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,z== i--s L-J =7 f .------ z z = = * an AMP company Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic~MetalKeramic Package Absolute Maximum Ratings at 25°C Parameter Symbol Rating 27 20 3.5 Units t------T')JFH!T-T.J V V V mA W I “C “C ‘3 I .3?>= 310 C9.>3Z.>3) I I Collector-Emitter Voltage Collector-Emitter Voltage Emitter-BaseVoltage Collector Current (Peak) Total Power Dissipation JunctionTemperature Storage Temperature ( ! VCES v CEO VES0 ‘c P7-7 T, T STG I ,137~4:: ~BZ.15) 710 7.8 .004z.
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