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PHI214-30EL - Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz

Features

  • _-. -- - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘MetalKeramic Package =.
  • C23.83) .820 37kC13 (9 53E.25) I Absolute Maximum Ratings at 25°C Parameter Collector-EmitterVoltage ( Emitter-BaseVoltage Collector Current (Peak) Total Power Dissipation JunctionTemperature Storage Temperature 1 Symbol V ES V,,, ‘t P TOT T.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PHI214-0851 Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
PHI214-20EL Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25L Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-25S Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-6M Radar Pulsed Power Transistor/ SW/ looms Pulse/ 10% Duty 1.2 - 1.4 GHz

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an AMP company Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz v2.00 Features _-.-- - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic‘MetalKeramic Package =..* C23.83) .820 37kC13 (9 53E.25) I Absolute Maximum Ratings at 25°C Parameter Collector-EmitterVoltage ( Emitter-BaseVoltage Collector Current (Peak) Total Power Dissipation JunctionTemperature Storage Temperature 1 Symbol V ES V,,, ‘t P TOT TJ T sic 1 Rating 56 3.0 3.0 50 200 -65 to +200 ( Unita V V A w “C “C UNLESS K’IERWISE NJTED, TDLER4N:ES CARE INCHES :H!LLIMETRS :.DDY -.!3MM) .375i.OlO :9.53=.
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