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PHI214-25L - Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz

Features

  • l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Symbol V ES V Em Ic P TOT TJ T ST0 Rating 70 3.0 1.6 40 200 -65 to +200 Units V V A W “C “C .3751.011 (9.33t.2)) 1 Emitter-Base Voltage Collector.

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Other Datasheets by Tyco Electronics (now TE Connectivity)

Part Number Description
PHI214-25S Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-20EL Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz
PHI214-0851 Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
PHI214-30EL Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz
PHI214-6M Radar Pulsed Power Transistor/ SW/ looms Pulse/ 10% Duty 1.2 - 1.4 GHz

Full PDF Text Transcription

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= =z an AMP company SC= z = Radar Pulsed Power Transistor, 25W, 300~s Pulse, 10% Duty PHI 214-25L 1.2 - 1.4 GHz v2.00 Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Symbol V ES V Em Ic P TOT TJ T ST0 Rating 70 3.0 1.6 40 200 -65 to +200 Units V V A W “C “C .3751.011 (9.33t.2)) 1 Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature / UNLESS OTHERWiSE NOTED. TOLERANCES ARE INCHES ‘.
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