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TPC8407 - Silicon Dual-Channel MOSFET

Key Features

  • (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance P-channel RDS(ON) = 18 mΩ (typ. ) (VGS = -10 V), N-channel RDS(ON) = 14 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current P-channel IDSS = -10 µA (VDS = -30 V), N-channel IDSS = 10 µA (VDS = 30 V) (5) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8407 SOP-8 1: Sourc.

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Datasheet Details

Part number TPC8407
Manufacturer Toshiba
File Size 402.73 KB
Description Silicon Dual-Channel MOSFET
Datasheet download datasheet TPC8407 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H) TPC8407 1. Applications • Motor Drivers • CCFL Inverters • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) High speed switching (3) Low drain-source on-resistance P-channel RDS(ON) = 18 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 14 mΩ (typ.) (VGS = 10 V) (4) Low leakage current P-channel IDSS = -10 µA (VDS = -30 V), N-channel IDSS = 10 µA (VDS = 30 V) (5) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8407 SOP-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 Start of commercial production 2011-03 1 2014-01-07 Rev.2.0 TPC8407 4.