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TPC8406-H
TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel／N-Channel Ultra-High-Speed U-MOSIII)
TPC8406-H
High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
Unit: mm
• Small footprint due to a small and thin package
• High speed switching
• Low drain-source ON-resistance: P-Channel RDS (ON) = 24 mΩ (typ.)
N-Channel RDS (ON) = 22 mΩ (typ.)
• Small gate charge:
P-Channel QSW = 9.7 nC (typ.)
N-Channel QSW = 3.5 nC (typ.)
• High forward transfer admittance: P-Channel |Yfs| = 13 S (typ.)
N-Channel |Yfs| = 14 S (typ.)
• Low leakage current: P-Channel IDSS = −10 μA (VDS = −40 V) N-Channel IDSS = 10 μA (VDS = 40 V)
• Enhancement mode
: P-Channel Vth = −0.8 to −2.
TPC8406-H Datasheet
