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TPC8403 - MOSFET

Key Features

  • le-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (W) (V) PD VDS.
  • 30 12 VGS (V) TPC8403 P-channel rth.
  • tw 1000 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device ope.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) TPC8403 Motor Drive Applications Notebook PC Applications Portable Equipment Applications • • • • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.) N Channel |Yfs| = 7.8 S (typ.) Low leakage current: P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Low drain-source ON resistance: Unit: mm Enhancement mode : P Channel Vth = −1.0~−2.2 V (VDS = −10 V, ID = −1 mA) : N Channel Vth = 1.3~2.