S1807 - Silicon NPN Transistor

Datasheet Summary

Features

. Low Saturation Voltage : VCE ( sat )=0. 5V(Max. at Ic=500mA . Complementary to S1808. Unit in mm 5.1 MAX. a 55 MAX.

Toshiba

📥 Download Datasheet

Datasheet Details

Part number	S1807
Manufacturer	Toshiba
File Size	73.20 KB
Description	Silicon NPN Transistor
Datasheet	S1807 Datasheet
Additional preview pages of the S1807 datasheet.

📁 Similar Datasheet

S18 - SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (YS)
S18-05N-1 - PROXIMITY SWITCH (HIGHLY)
S18-05N-2 - PROXIMITY SWITCH (HIGHLY)
S18-05P-1 - PROXIMITY SWITCH (HIGHLY)
S18-05P-2 - PROXIMITY SWITCH (HIGHLY)
S18-L232B-2 - Mini SMD Digital Pyroelectric Infrared Sensors (Senba Sensing)
S1812 - Shielded Surface Mount Inductors (API Delevan)
S1850 - Crystal Clock Oscillator (SaRonix)
S1854 - Silicon NPN Transistor (ETC)
S1856 - MOS Digital Clock (AMI Semiconductor)

Other Datasheets by Toshiba

S1805 - Silicon NPN Transistor
S1806 - Silicon PNP Transistor
S1808 - Silicon PNP Transistor
S1836 - Silicon NPN Transistor
S1837 - Silicon PNP Transistor
S1838 - Silicon NPN Transistor
S1839 - Silicon PNP Transistor
S1840 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text

) ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1807 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERSDESIGNED FOR COMPLEMENTARY USE WITH S1808- FEATURES: . Low Saturation Voltage : VCE ( sat )=0. 5V(Max. at Ic=500mA . Complementary to S1808. Unit in mm 5.1 MAX. a 55 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vCBO vCEO vEBO IB PC [ stg RATING 35 30 800 200 625 150 -55-150 UNIT mA mA mV 1. EMITTER 2. BASE a COLLECTOR TOSHIBA TO-92 SC-43 Weight : 0.

Published: Jun 10, 2024 |