• Part: S1805
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 78.96 KB
Download S1805 Datasheet PDF
Toshiba
S1805
FEATURES . Excellent h FE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400m A . plementary to S1806. Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Range Storage Temperature SYMBOL VCBO 'CEO v EBO [ stg RATING 40 30 500 250 625 150 -55-150 UNIT V m A m A m V °C 1. EMITTER 2. BASE 3. COLLECTOR JEDEC EIAJ TOSHI BA TO- 98 SC-43 2- 5P1P Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC DC Current Gain (1) DC Current Gain (2) Collector-Emitter Saturation Voltage SYMBOL h FE U "FE(2) VCE(sat) Base-Emitter Saturation Voltage Base-Emitter Voltage Collector-Base Breakdown Voltage ABE(sat) VBE V (BR) CBO Collector-Emitter Breakdown Voltage v (BR) CEO Collector Cut-off Current Emitter Cut-off Current x CBO l EBO CONDITION VCE=1V, I c =50m A VCE =1V, I c =400m A I C =100m A, I B...