• Part: S1806
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 81.26 KB
Download S1806 Datasheet PDF
Toshiba
S1806
SILICON PHP EPITAXIAL TYPE (PCT PROCESS) . DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. REMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. LOW FREQUENCY, MEDIUM POWER AMPLIFIERSDRIVER STAGE AMPLIFIERS. FEATIT?ES: . Excellent h FE vs. Collector Current Characteristics, h FE(2)=23Min. at VCE =-1V, I c =-400m A . plementary to S1805. 5.1 MAX. Unit in mm MAXIMl'M RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL V CBO v CE0 v EB0 T,stg RATING -40 -30 UNIT 1. .EMITTER 2. BASE 3. COLLECTOR -500 m A -250 m A 625 m W -55 150 °C JEDEC EI AJ TOSHIBA TO-9 2 SC-43 2-5 PI Weight : 0.21g b UMJTRJCAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL CONDITION DC Current Gain (1) DC Current Gain (2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage h FE(l) h...