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K363. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK363 Un...
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witch, Constant Current and Impedance Converter Applications 2SK363 Unit: mm • High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low RDS (ON): RDS (ON) = 20 Ω (typ.) (IDSS = 15 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −40 V 10 mA 400 mW 125 °C −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
K363 Datasheet
