JDH2S02SL - Schottky Barrier Diode

Toshiba

Key Features

Suitable for reducing the product size due to the use of a small two-pin package supporting high-density mounting 3. Packaging and Internal Circuit 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 10 V Forward current IF 10 mA Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e. g. the.

JDH2S02SL schottky barrier diode by Toshiba - Datasheet Preview

Datasheet Details

Part number	JDH2S02SL
Manufacturer	Toshiba
File Size	123.54 KB
Description	Schottky Barrier Diode
Datasheet	JDH2S02SL Datasheet

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Schottky Barrier Diode Silicon Epitaxial Planar JDH2S02SL JDH2S02SL 1. Applications • Radio-Frequency Power Detectors 2. Features • Suitable for reducing the product size due to the use of a small two-pin package supporting high-density mounting 3. Packaging and Internal Circuit 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 10 V Forward current IF 10 mA Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.