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JDH2S01T
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S01T
UHF Band Mixer
· Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range Symbol VRM IF Tj Tstg Rating 5 30 125 -55~125 Unit V mA °C °C
JEDEC JEITA TOSHIBA
― ― 1-1H1A
Electrical Characteristics (Ta = 25°C)
Characteristics Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR CT IF = 2 mA VF = 0.5 V VR = 0.5 V VR = 0.2 V, f = 1 MHz Test Condition
Weight: 0.0013 g (typ.)
Min ¾ 30 ¾ ¾
Typ. 0.25 ¾ ¾ 0.
JDH2S01T Datasheet
