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JDH2S01FS
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S01FS
UHF Band Mixer
• •
ｶｿｰﾄﾞﾏｰｸ
Unit: mm
Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting
0.6±0.05 0.1 0.8±0.05
A
Characteristic Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range
Symbol VR IF Tj Tstg
Rating 4 25 125 −55~125
Unit V mA °C °C
0.07
M
0.1
A
0.2 ±0.05
0.1±0.05
0.48 +0.02 -0.03
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.
JDH2S01FS Datasheet
