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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4682
Strobe Flash Applications Medium Power Amplifier Applications
2SC4682
Unit: mm
• Excellent hFE linearity: hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 30 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO VCES V (BR) CEO VEBO
IC ICP IB PC Tj Tstg
Rating
30 30 15 6 3 6 0.8 900 150 −55 to 150
Unit V
V
V
A
A mW °C °C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.
C4682 Datasheet
