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2SC4666
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4666
Audio Frequency Amplifier Applications Switching Applications
• High hFE: hFE = 600~3600 • High voltage: VCEO = 50 V • High collector current: IC = 150 mA (max) • Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
50 50 5 150 30 100 125 −55~125
Unit
V V V mA mA mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.
C4666 Datasheet
