Click to expand full text
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4215
High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications
2SC4215
Unit: mm
• Small reverse transfer capacitance: Cre = 0.55 pF (typ.) • Low noise figure: NF = 2dB (typ.) (f = 100 MHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
20
mA
Base current
IB
4
mA
Collector power dissipation
PC
100
mW
Junction temperature Storage temperature range
Tj
125
°C
JEDEC
―
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g.
C4215 Datasheet
