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2SC4210
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4210
Audio Power Amplifier Applications
• High DC current gain: hFE = 100~320 • Complementary to 2SA1621
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
35 30 5 800 160 200 150 −55~150
V V V mA mA mW °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
C4210 Datasheet
