C4204 - 2SC4204

Features

Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Large current capacity (IC=0.7A).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Te.

Sanyo Semiconductor Corporation

Datasheet Details

Part number	C4204
Manufacturer	Sanyo Semiconductor Corporation
File Size	136.10 KB
Description	2SC4204
Datasheet	C4204 Datasheet
Additional preview pages of the C4204 datasheet.

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Ordering number:EN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications · AF amplifier, various drivers. Package Dimensions unit:mm 2003B [2SC4204] 5.0 4.0 4.0 Features · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=0.7A). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.3 1.

Published: Dec 17, 2009 |