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SSM6L40TU
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L40TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • • N-ch: 4.0-V drive P-ch: 4.0 -V drive N-ch, P-ch, 2-in-1 Low ON-resistance
2.1±0.1 1.7±0.1
Unit: mm
Q1 N-ch: Ron = 182 mΩ (max) (@VGS = 4 V) Ron = 122 mΩ (max) (@VGS = 10 V) Q2 P-ch: Ron = 403 mΩ (max) (@VGS = -4 V) Ron = 226 mΩ (max) (@VGS = -10 V)
0.65 0.65
2 3
5 4
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse
Symbol VDSS VGSS ID IDP
Rating 30 ±20 1.6 3.2
Unit V V A
0.7±0.05
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6L40TU Datasheet
