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SSM6L10TU - MOSFET

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SSM6L10TU www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L10TU High Speed Switching Applications • • Optimum for high-density mounting in small packages Low on-resistance Q1: Ron = 395mΩ (max) (@VGS = 1.8 V) Q2: Ron = 980mΩ (max) (@VGS = -1.8 V) Unit: mm 2.1±0.1 1.7±0.1 0.65 0.65 Unit V V A Q1 Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 1.3±0.1 Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 20 ± 12 0.5 1.5 1 2 3 6 5 4 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating -20 ±8 -0.5 -1.5 Unit V V A 0.7±0.05 UF6 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.
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