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SSM60T03GS - N-channel Enhancement-mode Power MOSFET

Download the SSM60T03GS datasheet PDF. This datasheet also covers the SSM60T03GP variant, as both devices belong to the same n-channel enhancement-mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications.

This device is suitable for low-voltage applications such as DC/DC converters.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSM60T03GP_SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM60T03GS
Manufacturer Silicon Standard
File Size 419.69 KB
Description N-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM60T03GS Datasheet

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Other Datasheets by Silicon Standard

Part Number Description
SSM60T03GH N-channel Enhancement-mode Power MOSFET
SSM60T03GJ N-channel Enhancement-mode Power MOSFET
SSM60T03GP N-channel Enhancement-mode Power MOSFET
SSM60T03H N-Channel Enhancement Mode Power MOSFET
SSM60T03J N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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SSM60T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free, RoHS compliant. D BV DSS R DS(ON) ID 30V 12mΩ 45A G S DESCRIPTION The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM60T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, permitting operation up to a maximum junction temperature of 175°C.
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