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SSM5N05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N05FU
High Speed Switching Applications
· · · Small package Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V) : Ron = 1.2 Ω (max) (@VGS = 2.5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ±12 400 800 300 150 -55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-2L1B
Note1: Total rating, mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 5)
Weight: 6.2 mg (typ.
SSM5N05FU Datasheet
