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SSM5N03FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM5N03FE
High-Speed Switching Applications Analog-Switch Applications
• • • • Input impedance is high; driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching Housed in an ultra-small package suitable for high density mounting Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55 to 150 Unit V V mA mW °C °C
Note:
JEDEC ― Using continuously under heavy loads (e.g.
SSM5N03FE Datasheet
