Full PDF Text Transcription for K3565 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3565. For precise diagrams, and layout, please refer to the original PDF.
2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3565 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (...
View more extracted text
ator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.
More Datasheets from Toshiba
K3565 Datasheet
