Full PDF Text Transcription for K3564 (Reference)
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K3564. For precise diagrams, and layout, please refer to the original PDF.
2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3564 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 3...
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ator Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 3 9 40 408 3 4.
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K3564 Datasheet
