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K3563. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Maximum ...
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MOSⅥ) 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55~150 A W mJ A mJ °C °C Unit 0.69±0.15 2.8Max V V V 2.54±0.25 0.64±0.15 2.54±0.25 2.6 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1. 2. 3.
K3563 Datasheet
